Description

The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and
an integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350F is suitable for gate driving IGBTs or power MOSFETs.
Absolute maximum ratings and electrical characteristics are the same as
TLP350technical datasheet.
Peak output current: IO = ±2.5A (max)
Guaranteed performance over temperature: −40 to 100°C
Supply current:ICC = 2 mA (max)
Power supply voltage: VCC = 15 to 30 V
Threshold input current : IFLH = 5 mA (max)
Switching time (tpLH/tpHL) : 500 ns (max)
Common mode transient immunity: 15 kV/μs
Isolation voltage: 3750 Vrms
UL Recognized : UL1577,File No.E67349
Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage : 6000VPK