IRF 520 N-Channel Power Mosfet
Specification:
N-Channel Power MOSFET
Continuous Drain Current (ID): 9.2A
Drain to Source Breakdown Voltage: 100V
Drain Source Resistance (RDS) is 0.27 Ohms
Gate threshold voltage (VGS-th) is 4V (max)
Rise time and fall time is 30nS and 20nS
It is commonly used with Arduino, due to its low threshold voltage.
Available in To-220 package
