IRF 1010E - N-Channel Power Mosfet
Specification:
Type: n-channel
Drain-to-Source Breakdown Voltage: 60 V
Gate-to-Source Voltage, max: ±20 V
Drain-Source On-State Resistance, max: 12.000 Ohm
Continuous Drain Current: 81 A
Total Gate Charge: 86.6 nC
Power Dissipation: 170 W
Package: TO-220AB
