Features
650V @TJ = 150oC
RDS(on) = 51.5mΩ( Typ.)@ VGS= 10V, ID=23.5 A
Ultra Low Gate Charge ( Typ.Qg=115nC)
Low Effective Output Capacitance
100% Avalanche Tested
RoHS Compliant

Description
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi-based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.