Type Designator: IRFB4115
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 380 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 104 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 77 nC
Rise Time (tr): 73 nS
Drain-Source Capacitance (Cd): 490 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm