IRF 840 N-Channel Power Mosfet
Specification:
N-Channel Power MOSFET
Continuous Drain Current (ID): 8A
Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
Drain to Source Breakdown Voltage: 500V
Drain Source Resistance (RDS) is 0.85 Ohms
Rise time and fall time is 23nS and 20nS
Available in To-220 package
