IRF 740 N-Channel Power Mosfet
Specification:
N-Channel Power MOSFET
Continuous Drain Current (ID): 10A
Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
Drain to Source Breakdown Voltage: 400V
Drain Source Resistance (RDS) is 0.55 Ohms
Rise time and fall time is 27nS and 24nS
Available in To-220 package