IRF 510 N-Channel Power Mosfet
Specification:
N-Channel Power MOSFET
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 5.6 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 8.3 nC
Maximum Drain-Source On-State Resistance (Rds): 0.54 Ohm
Package: TO220AB
